Mosfet irfp460 pdf. Description: Power MOSFET.

Mosfet irfp460 pdf A, 28-Jul-08 IRFP460, SiHFP460 Vishay Siliconix Fig. 4 Results. All of irfp460. 1. Dynamic dV/dt rating. IRFP460 Equivalent MOSFETs. Apr 22, 2022 · IRFP460 Transistor Explained / Description: Today we are going to discuss about a quite interesting MOSFET which is IRFP460. Manufacturer: International Rectifier. 9 µC di MOSFET symbol showing the integral reverse p - n junction diode--20 A Pulsed diode forward current a ISM--80 Body diode voltage VSD TJ = 25 °C, IS = 20A, VGS = 0 V b-- 1. www. SMPS MOSFET IRFP460N HEXFET® Power MOSFET Switch Mode Power Supply ( SMPS ) Uninterruptable Power Supply High speed power switching Benefits Applications Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and dynamic dv/dt Ruggedness Fully Characterized Capacitance and Avalanche Voltage and Current IRFP460 IXYS MOSFETs 500V 20A datasheet, inventory, & pricing. 4A TO-247 PowerMesh™II MOSFET TYPICAL R DS(on) = 0. Power MOSFET. 270 Ohm, N-Channel Power MOSFET International Rectifier: IRFP460: 163Kb / 6P: Power MOSFET(Vdss mili-amperes, the MOSFET used isthe IRFP460N. com Vishay Siliconix S22-0058-Rev. N-Channel MOSFET G D S TO-247 G D S Available RoHS* COMPLIANT ORDERING INFORMATION Package TO-247 Lead (Pb)-free IRFP460PbF SiHFP460-E3 SnPb IRFP460 SiHFP460 ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDS 500 V Gate-Source Voltage VGS ± 20 Continuous Drain Current VGS at 10 V . The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices. 33ohm - 14A - TO-247 PowerMESH] MOSFET File Size 90. The IRFP460 is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) that is commonly used in high-power switching applications, such as in power supplies, motor control, and amplifiers. 22Ω - 20 A - TO-247PowerMESH™ MOSFETsTYPICAL RDS(on) = 0. CARACTERISTICAS: Valor dinámico dV / dt. The TO-247AC package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220AB devices. IRFP460 Datasheet PDF File. IRF3205, IRF250, IRF840 . 22 ohm - 20 A - TO-247 PowerMESH] MOSFET. IRFP460 is an N Channel MOSFET device available in TO-247 package. 99 Kbytes : Html irfp460. However, the newer lower charge MOSFETs now available lower the losses at high frequency and therefore re -asserted IRFP460A datasheet, IRFP460A pdf, IRFP460A data sheet, datasheet, data sheet, pdf, Fairchild Semiconductor, 20A,500V,0. 03 Kbytes. 3 days ago · IRFP460: STW20NK50Z: Manufacturer: STMicroelectronics: STMicroelectronics: Description: MOSFETs MOSFETs N-Ch 500 Volt 17 Amp Zener SuperMESH Lifecycle: Obsolete - Datasheet: IRFP460 Datasheet (PDF) STW20NK50Z Datasheet (PDF) Aug 1, 2023 · IRFP460 Datasheet PDF - Power MOSFET - IXYS, IRFP460 transistor, IRFP460 pinout, data, circuit, ic, manual, parts, schematic, equivalent. Download IRFP460C Datasheet. The IRFP460 is an N-channel MOSFET manufactured by Vishay. Sep 6, 2022 · IRFP460 Datasheet PDF - Power MOSFET - Vishay, IRFP460 pinout, IRFP460 schematic, data, circuit, ic, SiHFP460 manual, substitute, parts. Description: N - CHANNEL 500V - 0. 22 Ohm,N-Channel SMPS Power MOSFET IRFP460 N-CHANNEL 500V - 0. This article will unlock more details about IRFP460A. 270 Ohm, N-Channel Power MOSFET: Download IRFP460 datasheet from Intersil: pdf 61 kb : Discrete MOSFETs: Standard N-channel Types N-Channel MOSFET G D S TO-247 G D S Available RoHS* COMPLIANT ORDERING INFORMATION Package TO-247 Lead (Pb)-free IRFP460PbF SiHFP460-E3 SnPb IRFP460 SiHFP460 ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDS 500 V Gate-Source Voltage VGS ± 20 Continuous Drain Current VGS at 10 V N-Channel MOSFET G D S TO-247 G D S ORDERING INFORMATION Package TO-247 Lead (Pb)-free IRFP450PbF ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDS 500 V Gate-Source Voltage VGS ± 20 Continuous Drain Current VGS at 10 V TC = 25 °C ID 14 TC = 100 °C 8. 0 7. 22Ω - 18. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on state resistance combined with high transconductance; superior reverse energy and diode recovery dv/dt capability. datasheet IRFP460. Size:140K international rectifier irf460. Part #: IRFP250. 22 Ω - 20 A - TO-247 PowerMESH™ MOSFET TYPE IRFP460 s s s s s V DSS 500 V R DS(on) 0. 27 21The HEXFETtechnology is the key to InternationalRectifiers advanced line of power MOSFET transistors. However, careful attention must be given to ensure proper gate drive and current sharing among the devices. 27N-Channel Enhancement Mode, HDMOSTM FamilySymbol Test Conditions Maximum Ratings TO-247 ADVDSS TJ = 25C to 150C 500 VVDGR TJ = 25C to 150C; RGS = 1 M 500 VVGS Continuous 20 V D (TAB)VGSM Transient 30 VID25 TC = 25C20 AG = Gate, D = Drain,IDM TC = 25C, pulse wi Jul 10, 2023 · Q: Can I use multiple IRFP460 MOSFETs in parallel for higher current handling? A: Yes, it is possible to connect multiple IRFP460 MOSFETs in parallel to increase the current handling capacity. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. IRFP460 STMicroelectronics MOSFETs datasheet, inventory & pricing. Drain-to-Source Voltage Fig. Gate-to-Source Voltage Fig. Manufacturer: Fairchild Semiconductor. 7 A Pulsed Drain Currenta IDM 56 INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFP450FEATURESDrain Current I = 14A@ T =25D CDrain Source Voltage-: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 0. Fácil de paralelo. 3 20A, 500V, 0. File Size: 255Kbytes. VSD Diode Forward Voltage ––– ––– 1. 6 - Typical Gate Charge vs. Description: Power MOSFET(Vdss=500V, Rds(on)max=0. 27N-Channel Enhancement Mode, HDMOSTM FamilySymbol Test Conditions Maximum Ratings TO-247 ADVDSS TJ = 25C to 150C 500 VVDGR TJ = 25C to 150C; RGS = 1 M 500 VVGS Continuous 20 V D (TAB)VGSM Transient 30 VID25 TC = 25C20 AG = Gate, D = Drain,IDM TC = 25C, pulse wi Aug 19, 2023 · IRFP460 Datasheet - 500V, Power MOSFET (TO-3P), IRFP460 pdf, IRFP460 pinout, IRFP-460 equivalent, IRFP-460 replacement, IRFP460 schematic, manual, data. 22Ω and extremely high dv/dt capability - Intended applications include high current switching, UPS systems, and DC/DC converters - Provided are electrical N-Channel MOSFET G D S TO-247 G D S Available RoHS* COMPLIANT ORDERING INFORMATION Package TO-247 Lead (Pb)-free IRFP460PbF SiHFP460-E3 SnPb IRFP460 SiHFP460 ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDS 500 V Gate-Source Voltage VGS ± 20 Continuous Drain Current VGS at 10 V 8. This Power MOSFET 01-Jan-2022: IRFP460B: 186Kb / 8P: D Series Power MOSFET Rev. 27ohm, Id=20A). Manufacturer: NXP Semiconductors. This could allow a smaller IGBT to replace the larger MOSFET in some applications. 35 Kbytes. The MOSFET is protected using several diodes on the Gate, Drain and Source pins. PD - 94004AIRFP260NHEXFET Power MOSFET Advanced Process TechnologyDVDSS = 200V Dynamic dv/dt Rating 175C Operating Temperature Fast SwitchingRDS(on) = 0. Page: 8 Pages. Page: 9 Pages. IRFP460 is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. The MOSFET (with a 680 picofarad, 2 Kilo-volt capacitor) is connected to one end of the primary coil andthe other is connected to one end of the 110 Volts AC line with a 6 Ampere diode in series. File Size: 55Kbytes. B, 16-Apr-12: Inchange Semiconductor IRFP460B: 419Kb / 2P: isc N-Channel MOSFET Transistor Vishay Siliconix: IRFP460B: 214Kb / 10P: D Series Power MOSFETs 01-Jan-2022: IRFP460BPBF: 214Kb / 10P: D Series Power MOSFET Rev. Power MOSFET I D(cont) = 20 A R DS(on) = 0. 22ohm - 18. Part #: IRFP460N. 270 Ohm, N-Channel Power MOSFET IXYS Corporation: IRFP460: 77Kb / 4P: MegaMOS - Power MOSFET Vishay Download IRFP460 Datasheet. 270 Ohm, N-Channel Power MOSFET IXYS Corporation: IRFP460: 77Kb / 4P: MegaMOS - Power MOSFET Vishay IR provided a wide range of products including power management ICs, power MOSFETs, IGBTs, and other power control products. Description: 500V N-Channel MOSFET. 40 14A High speed power switchingBenefits Low Gate Charge Qg results in SimpleDrive Requirement Improved Gate, Avalanche and Dynamicdv/dt Ruggedness Fully Characterized Capacitance andAvalanche IR provided a wide range of products including power management ICs, power MOSFETs, IGBTs, and other power control products. Q: Are there any alternatives to the IRFP460? Mar 5, 2018 · IRFP460 is N-Channel HEXFET Power MOSFET. Size:101K international rectifier irfp450a. 27N-Channel Enhancement Mode, HDMOSTM FamilySymbol Test Conditions Maximum Ratings TO-247 ADVDSS TJ = 25C to 150C 500 VVDGR TJ = 25C to 150C; RGS = 1 M 500 VVGS Continuous 20 V D (TAB)VGSM Transient 30 VID25 TC = 25C20 AG = Gate, D = Drain,IDM TC = 25C, pulse wi Aug 28, 2022 · The IRFP460LC is 500V, 20A, Power MOSFET. Download. Part #: IRFP460C. This transistor is having many useful features which are as follow: Require low gate drive power: Mar 28, 2022 · The IRFP460 is an N-channel MOSFET manufactured by Vishay. ® IRFP460 N - CHANNEL 500V - 0. 22ΩsEXTREMELY HIGH dv/dt CAPABILITY Datasheet search, datasheets, Datasheet search site for Electronic Components and Semiconductors, integrated circuits, diodes, triacs and other semiconductors. . Part #: IRFP460. SMPS MOSFET IRFP460N HEXFET® Power MOSFET Switch Mode Power Supply ( SMPS ) Uninterruptable Power Supply High speed power switching Benefits Applications Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and dynamic dv/dt Ruggedness Fully Characterized Capacitance and Avalanche Voltage and Current IS Continuous Source Current MOSFET symbol (Body Diode) showing the ISM Pulsed Source Current integral reverse (Body Diode) p-n junction diode. 27Ω on-resistance at 10V gate voltage. 270 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power eld effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a speci ed level of energy in the breakdown avalanche mode of operation. Manufacturer: Vishay Siliconix. File Size: 721. SMPS MOSFET IRFP460A HEXFET® Power MOSFET l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply l High speed power switching Benefits Applications l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche Voltage and Current Continuous source-drain diode current IS MOSFET symbol showing the integral reverse p - n junction diode-- 20 A Pulsed diode forward current a ISM-- 80 Body diode voltage VSD TJ = 25 °C, IS = 20 A, VGS = 0 Vb-- 1. 22 ohm - 20 A - TO-247 PowerMESH] MOSFET Alpha & Omega Semicondu AOW14N50: 329Kb / 6P: 500V, 14A N-Channel MOSFET AOT14N50FD: 237Kb / 6P: 500V, 14A N-Channel pdf 102 kb : 500V Single N-Channel HEXFET Power MOSFET in a TO-247AC package Others with the same file for datasheet: IRFP460PBF: Download IRFP460 datasheet from International Rectifier: pdf 169 kb : 20A, 500V, 0. Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The Overview of IRFP460. Manufacturer: STMicroelectronics. Part number : IRFP460. This MOSFET can be utilized in switching converters with mains voltage input, high voltage amplifiers, and motor drivers due to its high breakdown voltage. IRFP460 Datasheet (PDF) Download Datasheet: Part N - CHANNEL 500V - 0. At a 10 V gate voltage, it is designed to have a high breakdown voltage of 500V and a low on-resistance of 0. showing the . This benefit, combined with the fast switching speed and rugged device design that IR MOSFET™ devices are well known for, provides the designer with an View IRFP460 by Vishay Siliconix datasheet for technical specifications, Download PDF Datasheet Feedback/Errors MOSFET symbol. 4A TO-247 PowerMesh?줚I MOSFET IRFP460: 91Kb / 8P: N - CHANNEL 500V - 0. irfp460. 27 Ω ID 20 A TYPICAL RDS(on) = 0. Description: 20A, 500V, 0. 27N-Channel Enhancement Mode, HDMOSTM FamilySymbol Test Conditions Maximum Ratings TO-247 ADVDSS TJ = 25C to 150C 500 VVDGR TJ = 25C to 150C; RGS = 1 M 500 VVGS Continuous 20 V D (TAB)VGSM Transient 30 VID25 TC = 25C20 AG = Gate, D = Drain,IDM TC = 25C, pulse wi El IRFP460PBF es un MOSFET de potencia de N-canal de 500V, el MOSFET de potencia de tercera generación proporciona al diseñador la mejor combinación de conmutación rápida, diseño de dispositivo robusto y baja resistencia. IRFP460 Datasheet (PDF) Help us improve our product data for Mouser Part # 747-IRFP460. 50ohm - 30A - TO-220/TO-220FI POWER MOSFET SHENZHEN DOINGTER SEMIC IRF540: 1Mb / 5P: N-Channel MOSFET uses advanced trench technology Fairchild Semiconductor: IRF540: 146Kb / 5P: N-Channel Power MOSFETs, 27 A, 60-100V List of Unclassifed Man IRF540: 2Mb / 31P: SEMICONDUCTORS International Rectifier: IRF540: 177Kb / 6P IRFP460N Datasheet. Environmental Documents Sep 29, 2021 · Note: Complete technical details can be found in the IRFP460 datasheet given at the end of this page. vishay. 270 Ohm, N-Channel Power MOSFET IXYS Corporation: IRFP460: 77Kb / 4P: MegaMOS - Power MOSFET Vishay The HEXFET®technology is the key to International Rectifier’s advanced line of power MOSFET transistors. SMPS MOSFET IRFP450N HEXFET Power MOSFET Switch Mode Power Supply (SMPS) Uninterruptible Power Supply High Speed Power Switching Benefits Applications Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and Dynamic dv/dt Ruggedness Fully Characterized Capacitance and Avalanche Voltage and Current IRFP460 20A, 500V, 0. 22ohm - 20A - TO-247 PowerMESH MOSFET STW20NC50: 249Kb / 8P: N-CHANNEL 500V - 0. . Description: PowerMOS transistors Avalanche energy rated. It is designed to have a high breakdown voltage of 500V and a low on-resistance of 0. pdf MegaMOSTM IRFP 460 VDSS = 500 VPower MOSFET ID(cont) = 20 ARDS(on) = 0. pdf INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFP460FEATURESDrain Current I = 20A@ T =25D CDrain Source Voltage-: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 0. 5 - Typical Capacitance vs. Datasheet: 162Kb/8P. The efficient geometry and unique processing of this latestState of the Art . The N - CHANNEL100V - 00. Key details include: - Maximum ratings of 500V drain-source voltage, 20A continuous drain current - Typical on-resistance of 0. 27N-Channel Enhancement Mode, HDMOSTM FamilySymbol Test Conditions Maximum Ratings TO-247 ADVDSS TJ = 25C to 150C 500 VVDGR TJ = 25C to 150C; RGS = 1 M 500 VVGS Continuous 20 V D (TAB)VGSM Transient 30 VID25 TC = 25C20 AG = Gate, D = Drain,IDM TC = 25C, pulse wi Apr 1, 2022 · IRFP460, an N-channel power MOSFET, is designed to offer the best combination between low on-resistance, fast switching, and low on-resistance. FEATURES. techsupport@vishay. Requisito de unidad simple irfp460. IRFP460 Datasheet (PDF) Show All. 8 - Maximum Safe Operating Area 91237_05 10 000 8000 6000 4000 0 2000 100 101 Capacitance(pF) VDS, Drain-to-Source Voltage IRFP460: 94Kb / 7P: PowerMOS transistors Avalanche energy rated September 1999 Rev 1. B, 31-Jan-2022 3 Document Number: 91235 For technical questions, contact: hvmos. Manufacturer: Intersil Corporation. 86 Kbytes. +49 (0)89 520 462 110 . IR provided a wide range of products including power management ICs, power MOSFETs, IGBTs, and other power control products. txt) or read online for free. File Size: 721Kbytes. Request Sample. 8V Body diode reverse recovery time trr TJ = 25 °C, IF = 20A, dI/dt = 100 A/μsb - 570 860 ns Body diode reverse recovery charge Part #: IRFP460. Third generation power MOSFETs from Vishay provide the max. Isolated central mounting hole. The layout re- Philips SemiconductorsProduct specificationPowerMOS transistorsIRFP460Avalanche energy ratedFEATURESSYMBOLQUICK REFERENCE DATA• Repetitive Avalanche Rated• Fast switching Datasheet search, datasheets, Datasheet search site for Electronic Components and Semiconductors, integrated circuits, diodes, triacs and other semiconductors. 270 Ohm, N-Channel Power MOSFET. Vishay's IRFP460 is an N-channel power MOSFET. ©2002 Fairchild Semiconductor Corporation IRFP460 Rev. 27Ω at Oct 11, 2021 · N-Channel Tube 270mOhm @ 12A, 10V ±30V 3100pF @ 25V 105nC @ 10V 500V TO-247-3 . 22 Ω EXTREMELY HIGH dv, dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED 3 2 1 DESCRIPTION This power MOSFET is designed using the company’s consolidated strip layout-based MESH OVERLAY™ p IRFP460PBF datasheet, IRFP460PBF pdf, IRFP460PBF data sheet, datasheet, data sheet, pdf, International Rectifier, 500V Single N-Channel HEXFET Power MOSFET in a TO-247AC package IRFP460: STW20NK50Z: Manufacturer: STMicroelectronics: STMicroelectronics: Description: MOSFETs MOSFETs N-Ch 500 Volt 17 Amp Zener SuperMESH Lifecycle: Obsolete - Datasheet: IRFP460 Datasheet (PDF) STW20NK50Z Datasheet (PDF) RoHS: Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. IR MOSFET™ technology from Infineon utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. (nC) 72 designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. pdf PD -91884SMPS MOSFETIRFP450AHEXFET Power MOSFETApplicationsVDSS Rds(on) max ID Switch Mode Power Supply ( SMPS ) Uninterruptable Power Supply 500V 0. The efficient geometry and unique processing of this latestState of the Art IR provided a wide range of products including power management ICs, power MOSFETs, IGBTs, and other power control products. 5μC ©2002 Fairchild Semiconductor Corporation IRFP460 Rev. View IRFP460 by Vishay Siliconix datasheet for technical specifications, Download PDF Datasheet Feedback/Errors MOSFET symbol. This was the condition in 1997. 27N-Channel Enhancement Mode, HDMOSTM FamilySymbol Test Conditions Maximum Ratings TO-247 ADVDSS TJ = 25C to 150C 500 VVDGR TJ = 25C to 150C; RGS = 1 M 500 VVGS Continuous 20 V D (TAB)VGSM Transient 30 VID25 TC = 25C20 AG = Gate, D = Drain,IDM TC = 25C, pulse wi IRFP460 PRODUCT INFORMATION. All of Part #: IRFP460. Page: 7 Pages. 22Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED DESCRIPTION The PowerMESH™ II is the evolution of the first generation of MESH OVERLAY™. The IRFP460 is a versatile N-channel MOSFET transistor designed for high-power applications across diverse electronic systems. The IR provided a wide range of products including power management ICs, power MOSFETs, IGBTs, and other power control products. com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. Description: Power MOSFET. 27N-Channel Enhancement Mode, HDMOSTM FamilySymbol Test Conditions Maximum Ratings TO-247 ADVDSS TJ = 25C to 150C 500 VVDGR TJ = 25C to 150C; RGS = 1 M 500 VVGS Continuous 20 V D (TAB)VGSM Transient 30 VID25 TC = 25C20 AG = Gate, D = Drain,IDM TC = 25C, pulse wi IR provided a wide range of products including power management ICs, power MOSFETs, IGBTs, and other power control products. (800) 346-6873 (PDF) Product Compliance USHTS: 8541290095 CNHTS The IRFP460 is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) that is commonly used in high-power switching applications, such as in power supplies, motor control, and amplifiers. Datasheet. This new series of low charge Power MOSFETs achieve significantly lower gate chargeover conventional MOSFETs. 27 . B, 16-Apr-12: IRFP460BPBF: 188Kb / 9P: D IRFP450 Datasheet (PDF) - STMicroelectronics: Part # IRFP450: Description: N - CHANNEL 500V - 0. This high-voltage device has a drain-source breakdown of 500V and a 0. B IRFP460 20A, 500V, 0. Datasheet: 94Kb/8P. IRFP460LC www. 000: STMicroelectronics: IRFP460: 91Kb / 8P: N - CHANNEL 500V - 0. File Size: 94. 4(Max)DS(on)Fast Switching100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in swit IRFP460: 94Kb / 7P: PowerMOS transistors Avalanche energy rated September 1999 Rev 1. 7 - Typical Source-Drain Diode Forward Voltage Fig. pdf PD -90467REPETITIVE AVALANCHE AND dv/dt RATED IRF460500V, N-CHANNELHEXFETTRANSISTORSTHRU-HOLE (TO-204AA/AE)Product Summary Part Number BVDSS RDS(on) IDIRF460 500V 0. Repetitive avalanche rated. MOSFETs are voltage-controlled devices known for their fast switching speeds and high efficiency. gd The TO-247AC package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220AB devices. Functions : N-Channel MOSFET Transistor, This is Semiconductor. Utilizing advanced Power MOSFETs technology the device improvements allow for reduced gate drive requirements, faster switching speeds and increased total system savings. 27Ω G = Gate, D = Drain, S = Source, TAB = Drain Features l Repetitive avalanche energy rated l Fast switching times l Low R DS (on) HDMOSTM process l Rugged polysilicon gate cell structure l High Commutating dv/dt Rating Applications l Switching Power Supplies l Motor controls 92825D (5/98) D (TAB) IRFP460: 94Kb / 7P: PowerMOS transistors Avalanche energy rated September 1999 Rev 1. File Size: 169Kbytes. Packaged in a TO-247 casing, this transistor can manage up to 260W of power and 500V of voltage, making it an asset for a wide range of demanding applications. the losses of the IGBT are approximately equal to the losses of an IRFP460 if the switching speed is reduced to 50 kHz. 22 ohm - 20 A - TO-247 PowerMESH] MOSFET Intersil Corporation: IRFP460: 55Kb / 7P: 20A, 500V, 0. Description: N-CHANNEL 200V - 0. 34 Kbytes. pdf), Text File (. 22Ω-20A power MOSFET. 8V Body diode reverse recovery time trr TJ = 25 °C, IF = 20 A, dI/dt = 100 A/μs b - 480 710 ns Body diode reverse recovery charge Qrr-5. 27(Max)DS(on)Fast SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode N -Channel MOSFET G D S TO-247 G D S A vaila b le RoHS* COMPLIANT ORDERING INFORMATION Package TO-247 Lead (Pb)-free IRFP460PbF SiHFP460-E3 SnPb IRFP460 SiHFP460 ABSOLUTE MAXIMUM RATINGS T C = 25 °C, unless otherwise noted PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 500 V Gate-Source Voltage V GS ± 20 Continuous Drain Current V GS Jun 23, 2020 · 4. 6 9. General Description of IRFP460 MOSFET. IRFP460: 94Kb / 7P: PowerMOS transistors Avalanche energy rated September 1999 Rev 1. 27N-Channel Enhancement Mode, HDMOSTM FamilySymbol Test Conditions Maximum Ratings TO-247 ADVDSS TJ = 25C to 150C 500 VVDGR TJ = 25C to 150C; RGS = 1 M 500 VVGS Continuous 20 V D (TAB)VGSM Transient 30 VID25 TC = 25C20 AG = Gate, D = Drain,IDM TC = 25C, pulse wi Jan 7, 2025 · IRFP460 Vishay / Siliconix MOSFETs RECOMMENDED ALT IRFP datasheet, inventory, & pricing. The low thermal resistance IRFP460 Data Sheet July 1999 File Number 2291. File Size: 91. All of these power MOSFETs are designed for applications such Part #: IRFP460A. Manufacturer N-Channel MOSFET G D S TO-247AC G D S ORDERING INFORMATION Package TO-247AC Lead (Pb)-free IRFP460BPbF Lead (Pb)-free and Halogen-free SiHG460B-GE3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDS 500 Gate-Source Voltage V VGS ± 20 Gate-Source Voltage AC (f > 1 Hz) 30 This document provides specifications for the IRFP460, an N-channel 500V-0. File Size: 95. com Document Number: 91237 4 S-81360-Rev. The company's products were used in various applications such as computing, telecommunications, and industrial automation. 04G Fully Avalanche Rated Ease of ParallelingID = 50AS Simple Drive RequirementsDescriptionFifth Generation HEXFETs from International Rectifier utilize advanced processingtechniques to achieve irfp460. pdf - Free download as PDF File (. 27N-Channel Enhancement Mode, HDMOSTM FamilySymbol Test Conditions Maximum Ratings TO-247 ADVDSS TJ = 25C to 150C 500 VVDGR TJ = 25C to 150C; RGS = 1 M 500 VVGS Continuous 20 V D (TAB)VGSM Transient 30 VID25 TC = 25C20 AG = Gate, D = Drain,IDM TC = 25C, pulse wi N-Channel MOSFET G D S TO-247 G D S Available RoHS* COMPLIANT ORDERING INFORMATION Package TO-247 Lead (Pb)-free IRFP460PbF SiHFP460-E3 SnPb IRFP460 SiHFP460 ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDS 500 V Gate-Source Voltage VGS ± 20 Continuous Drain Current VGS at 10 V IRFP460N - CHANNEL 500V - 0. Avalancha repetitiva. 073ohm - 33A TO-247 PowerMesh II MOSFET. 270 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. 8 V TJ = 25°C, IS = 20A, VGS = 0V trr Reverse Recovery Time ––– 570 860 ns TJ = 25°C, IF = 20A Qrr Reverse RecoveryCharge ––– 6. File Size: 94Kbytes. slyrgrju qgefdp hsel mhjg nubcx yqro gjhz ney toijemu avcdi